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Product Datasheet
August 15, 2000
26- 34 GHz Medium Power Amplifier
TGA1073A-SCC
Key Features and Performance
* * * * * * 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL Bias 5 - 7V @ 220 mA Chip Dimensions 1.95 mm x 1.12 mm
Primary Applications
*
The TriQuint TGA1073A-SCC is a three stage MPA MMIC design using TriQuint's proven 0.25 um Power pHEMT process. The TGA1073A is designed to support a variety of millimeter wave applications including point-to-point digital radio and LMDS/LMCS.
Gain and Return Loss (dB)
Point-to-Point Radio Point-to-Multipoint Communications LMDS CPE PA
* *
25 20 15 10 5 0 -5 -10 -15 -20 26
The three stage design consists of a 200 um input device driving a 480um interstage device followed by an 800um output device. The TGA1073A provides 25dBm nominal output power at 1dB compression across 26-34GHz. Typical small signal gain is 19 dB. The TGA1073A requires minimum off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form.
S21
S11
S22 27 28 29 30 31 32 33 34
Frequency (GHz)
30 25 P1dB (dBm) 20 15 10 5 0 26 27 28 29 30 31 32 33 34 35 36 Frequency (GHz)
1 rev 11/10/98
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
TGA1073A-SCC
MAXIMUM RATINGS SYMBOL V I
+ +
PARAMETER 5/ POSITIVE SUPPLY VOLTAGE POSITIVE SUPPLY CURRENT INPUT CONTINUOUS WAVE POWER POWER DISSIPATION OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE
VALUE 8V 296 mA 23 dBm 2.37 W 150 0C 320 0C -65 to 150 0C
NOTES 1/ 4/ 2/ 3/
PIN PD TCH TM TSTG 1/ 2/ 3/
Total current for all stages. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. This value reflects an estimate. Actual value will be inserted as soon as it is determined. These ratings represent the maximum operable values for the device.
4/ 5/
DC SPECIFICATIONS (100%) (TA = 25 C + 5 C) NOTES SYMBOL IMAX3 IDSS3 GM3 1/ 1/ 1/ 1/ 1/ 1/ 2/ |VP1| |VP2| |VP3| |VBVGD1| |VBVGS1| TEST CONDITIONS 2/ MIN STD STD STD STD STD STD STD STD 300 80 176 0.5 0.5 0.5 11 11 LIMITS MAX 516 376 424 1.5 1.5 1.5 30 30 mA mA mS V V V V V UNITS
VP, VBVGD, and VBVGS are negative. The measurement conditions are subject to change at the manufacture's discretion (with appropriate notification to the buyer).
2 rev 11/10/98
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
TGA1073A-SCC
RF SPECIFICATIONS (TA = 25C + 5C) NOTE TEST MEASUREMENT CONDITIONS 6V @ 220mA 26 - 33 GHz 27 GHz 28 - 33 GHz 26 - 33 GHz 28 - 32 GHz 26 - 33 GHz 28 - 32 GHz 32 -15 -10 VALUE MIN 17 22 23 -15 -10 TYP 19 24.5 MAX dB dBm dBm dB dB dB dB dBm UNITS
1/
SMALL-SIGNAL GAIN MAGNITUDE POWER OUTPUT AT 1 dB GAIN COMPRESSION
1/
INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE OUTPUT THIRD ORDER INTERCEPT
1/
2/
1/
RF probe data is taken at 0.5 GHz steps.
2/
Minimum output third-order-intercept (OTOI) is generally 6dB minimum above the 1dB compression point (P1dB). Calculations are based on standard two-tone testing with each tone approximately 10dB below the nominal P1dB. Factors that may affect OTOI performance include device bias, measurement frequency, operating temperature, output interface and output power level for each tone.
RELIABILITY DATA PARAMETER RJC Thermal resistance (channel to backside of c/p) BIAS CONDITIONS VD (V) ID (mA) 6 220 PDISS (W) 1.32 RJC (C/W) 69.4 TCH (C) 146.6 TM (HRS) 1.3 E6
Note: Assumes eutectic attach using 1.5 mil thick 80/20 AuSn mounted to a 20mil CuMo Carrier at 55C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
3 rev 11/10/98
Product Datasheet
TGA1073A-SCC
TGA1073A - RF Probe Data Summary - S parameters and P1dB Vd=6V, Id=220mA, Ta=25C
s11
0
35 30
s21
-5
25
I nputRet n L ( ur oss dB)
-10 5th 25th 50th 75th 95th
20 5th 25th 50th 15 75th 95th
-15
-20
10
-25
5
-30 26
0
27
28
29
30
31
32
33
26
27
28
29
30
31
32
33
Frequency (GHz)
Frequency (GHz)
s22
0
P1dB
40 35
-5
-10
30
-15 5th 25th -20 50th 75th 95th -25
25 5th 25th 20 50th 75th 95th 15
-30
10
-35
5
-40 26 27 28 29 30 31 32 33 Frequency (GHz)
0 28 30 Frequency (GHz) 31.5
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
4 rev 11/10/98
Product Datasheet
TGA1073A-SCC Mechanical Characteristics
(VG1)
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
5 rev 11/10/98
Product Datasheet
TGA1073A-SCC
Chip Assembly and Bonding Diagram
Vd
.01uF
100pF
100pF
RFin RFout
100pF
.01uF
Vg
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
6 rev 11/10/98
Product Datasheet
TGA1073A-SCC
Reflow process assembly notes: *= *= *= *= *= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical
Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
7 rev 11/10/98

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